Anisotropic etching of SiC whiskers
Anisotropic etching of SiC whiskers
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DOI：
10.1021/nl051858v
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发表时间：
2006-03-01
期刊：
影响因子：
10.8
通讯作者：
Lutsenko, VG
中科院分区：
文献类型：
--
作者：
Cambaz, GZ;Yushin, GN;Lutsenko, VG
我们已经展示了一种从碳化硅（SiC）晶须生产纳米片或复杂的有序纳米结构的方法。在100 ℃的氢氟酸和硝酸（3：1比例）的混合物中优先蚀刻SiC晶须导致选择性地去除立方SiC和形成类似于宝塔结构的复杂结构。可能的机制进行了讨论选择性蚀刻。在不同实验室制造的SiC晶须上的可再现结果表明，自图案化现象在SiC晶须中是常见的，并且相同的无电蚀刻过程可以用于从更常规的纳米级和微米级物体合成各种复杂的纳米结构，以用作传感器、细胞探针以及电子、光电、机电和其他设备的制造中的构建块。
We have demonstrated a method of producing nanoplatelets or complex well-ordered nanostructures from silicon carbide (SiC) whiskers. Preferential etching of SiC whiskers in a mixture of hydrofluoric and nitric acids (3:1 ratio) at 100 degrees C results in the selective removal of cubic SiC and the formation of complex structures resembling a pagoda architecture. Possible mechanisms governing selective etching are discussed. Reproducible results on SiC whiskers manufactured in different laboratories suggest that the self-patterning phenomena are common in SiC whiskers, and the same electroless etching procedure can be used to synthesize various complex nanostructures from more conventional nano- and microscale objects for use as building blocks in the fabrication of sensors, cellular probes, and electronic, optoelectronic, electromechanical, and other devices.