Effects of Si3+ and H+ Irradiation on Tungsten Evaluated by Internal Friction Method
Effects of Si3+ and H+ Irradiation on Tungsten Evaluated by Internal Friction Method
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用内摩擦法评价Si3和H辐照对钨的影响
DOI：
10.1088/1009-0630/15/10/20
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发表时间：
2013
影响因子：
1.7
通讯作者：
LIU Changsong
中科院分区：
文献类型：
--
作者：
WANG Xianping;ZHAO Ziqiang;FANG Qianfeng;LIU Changsong
利用内耗（IF）技术研究了Si~（3+）和H~+辐照对钨的影响。扫描电子显微镜（SEM）分析表明，顺序双Si + H照射导致更严重的损伤比单Si照射。照射后，IF背景明显增强。此外，在70~330 K温度范围内，Si + H辐照钨样品中首次发现了两个明显的IF峰。离子辐照样品的IF背景增加的机制是由离子辐照引起的高密度位错引起的。另一方面，Si + H辐照样品中的弛豫峰PL和非弛豫峰PH分别归因于氢原子与移动的位错的相互作用过程和氢再分布的瞬态过程。实验结果验证了IF方法对核材料辐照损伤行为的高灵敏度。
Effects of Si3+ and H+ irradiation on tungsten were investigated by internal friction (IF) technique. Scanning electron microscope (SEM) analysis revealed that sequential dual Si+H irradiation resulted in more serious damage than single Si irradiation. After irradiation, the IF background was significantly enhanced. Besides, two obvious IF peaks were initially found in temperature range of 70∼330 K in the sequential Si+H irradiated tungsten sample. The mechanism of increased IF background for the irradiated samples was suggested to originate from the high density dislocations induced by ion irradiation. On the other hand, the relaxation peak PL and non-relaxation peak PH in the Si+H irradiated sample were ascribed to the interaction process of hydrogen atoms with mobile dislocations and transient processes of hydrogen redistribution, respectively. The obtained experimental results verified the high sensitivity of IF method on the irradiation damage behaviors in nuclear materials.