Influence of CdS and ZnSnO Buffer Layers on the Photoluminescence of Cu(In,Ga)Se $_2$ Thin Films
Influence of CdS and ZnSnO Buffer Layers on the Photoluminescence of Cu(In,Ga)Se $_2$ Thin Films
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CdS 和 ZnSnO 缓冲层对 Cu(In,Ga)Se $_2$ 薄膜光致发光的影响
DOI：
10.1109/jphotov.2016.2639347
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发表时间：
2017
影响因子：
3
通讯作者：
J. Leitão
中科院分区：
文献类型：
--
作者：
P. Salomé;J. Teixeira;J. Keller;T. Törndahl;S. Sadewasser;J. Leitão
事实证明，在功率转换效率方面，寻找Cu（In，Ga）Se<inline-formula><tex-math notation="LaTeX">$_2$</tex-math></inline-formula>（CIGS）太阳能电池中CdS缓冲层的替代品非常有希望。本文比较了常用的化学浴沉积CdS层和原子层沉积Zn<inline-formula><tex-math notation="LaTeX">$_{1-x}$</tex-math></inline-formula> Sn<inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula> O<inline-formula><tex-math notation="LaTeX">$_{y}$</tex-math></inline-formula>（ZnSnO）。利用外量子效率和光致发光光谱研究了不同缓冲层对CIGS缺陷性质的影响。对于这两个缓冲层，CIGS体和CIGS/缓冲界面的静电波动电位，这是不太明显的样品与ZnSnO缓冲层的强烈影响。这与在CIGS近界面层处的较低浓度的施主缺陷相关联。观察到缓冲层沉积导致CIGS带隙的变化。这项研究扩展了知识的复杂的四元半导体CIGS中的缺陷，其中，如所讨论的，甚至可以通过缓冲层的选择和它的沉积过程的影响。
The search for alternatives to the CdS buffer layer in Cu(In,Ga)Se<inline-formula><tex-math notation="LaTeX">$_2$ </tex-math></inline-formula> (CIGS) solar cells has turned out to be quite promising in terms of power conversion efficiency. In this paper, the typically used chemical-bath-deposited CdS layer is compared with an atomic-layer-deposited Zn<inline-formula><tex-math notation="LaTeX">$_{1-x}$</tex-math></inline-formula>Sn <inline-formula><tex-math notation="LaTeX">$_{x}$</tex-math></inline-formula>O<inline-formula> <tex-math notation="LaTeX">$_{y}$</tex-math></inline-formula> (ZnSnO). An optical study by external quantum efficiency and photoluminescence on the influence of different buffer layers on the defect properties of CIGS is presented. For both buffer layers, the CIGS bulk and CIGS/buffer interface are strongly influenced by electrostatic fluctuating potentials, which are less pronounced for the sample with the ZnSnO buffer layer. This is associated with a lower concentration of donor defects at the CIGS near-interface layer. A change in the bandgap of the CIGS as a consequence of the buffer layer deposition is observed. This study expands the knowledge of defects in the complex quaternary semiconductor CIGS, which, as discussed, can be affected even by the choice of buffer layer and its deposition process.