Excimer laser processing for the integrated gamma-ray detectors
Excimer laser processing for the integrated gamma-ray detectors
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用于集成伽马射线探测器的准分子激光加工
DOI：
10.1117/12.455779
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Hatanaka
中科院分区：
文献类型：
--
作者：
A. Nakamura;M. Niraula;K. Asano;T. Aoki;Y. Hatanaka
利用KrF准分子激光（波长248nm，脉宽20ns）对γ射线成像探测器进行了激光掺杂和激光烧蚀工艺的选择性操作。在高真空条件下，激光辐照表面区域被加热烧蚀。在高压条件下，烧蚀得到抑制，表面杂质熔化并扩散到CdTe衬底中。利用上述组合工艺，我们制作了一个集成成像探测器。该探测器在室温下具有较低的漏电流和良好的γ探测性能。
Selective operation of laser doping process and laser ablation process using KrF excimer laser irradiation (wavelength 248nm, pulse duration 20ns) was carried out that is used for fabricating an integrated gamma-ray imaging detector. At high vacuumed condition, laser irradiated surface region is heated up to ablated. At high-pressure condition, ablation is suppressed and impurity on the surface was melt and diffuse into the CdTe substrate. We have fabricated an integrated imaging detector using above combination process. The detector showed low leakage current at room temperature and good gamma-ray detection property.