Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (111)
Effect of Ge layer thickness on the formation of Mn5Ge3 thin film on Ge/Si (111)
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DOI：
10.1016/j.jmmm.2018.10.096
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发表时间：
2019-03-01
影响因子：
2.7
通讯作者：
Arslan, Leyla Colakerol
中科院分区：
文献类型：
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作者：
Yasasun, Burcu Toydemir;Onel, Aykut Can;Arslan, Leyla Colakerol
研究了Ge缓冲层厚度对外延Mn5Ge3薄膜的形成及其磁性能的影响。使用固相外延在 Ge/Si (1 1 1) 衬底上沉积外延铁磁 Mn5Ge3 薄膜。通过X射线衍射、透射电子显微镜、X射线光电子能谱、电子自旋共振等手段研究了薄膜的结晶质量、化学成分和磁性能。增加Ge层的厚度显着提高了Mn5Ge3薄膜的结晶度和磁均匀性。结构和磁性研究均表明 Mn 原子通过 Ge 缓冲层大量扩散，导致 Mn5Si3 的形成，并延迟 Mn5Ge3 的形成，直到 Ge 层的厚度达到 70 nm。观察到的在不同 Ge 厚度上生长的薄膜的磁性行为可以根据磁性相和表面性质的变化来解释。这些结果表明，尽管 Mn5Ge3 和 Si 之间存在类似 8% 的晶格失配 (1 1 1)，但 Mn5Ge3 可以在 Ge 缓冲层厚度超过 140 nm 的 Si 衬底上外延生长。
The effect of Ge buffer layer thickness on the formation of epitaxial Mn5Ge3 films and their magnetic properties has been investigated. Epitaxial ferromagnetic Mn5Ge3 thin films were deposited on Ge/Si (1 1 1) substrates using solid phase epitaxy. The crystalline quality, chemical composition and magnetic properties of the films were investigated by x-ray diffraction, transmission electron microscopy, x-ray photoelectron spectroscopy, electron spin resonance. Increasing the thickness of the Ge layer significantly enhanced the crystallinity and magnetic homogeneity of Mn5Ge3 films. Both structural and magnetic investigations show substantial diffusion of Mn atoms through Ge buffer layer which results in the formation of Mn5Si3 and a delay in Mn5Ge3 formation until the thickness of the Ge layer reaches to 70 nm. The observed magnetic behavior for the films grown on different Ge thicknesses is interpreted in terms of changes in the magnetic phases and surface properties. These results show that Mn5Ge3 can be epitaxially grown on Si substrate with Ge buffer layer thicknesses of above 140 nm, despite similar to 8% lattice mismatch between Mn5Ge3 and Si (1 1 1).