Single crystal Si layers on glass formed by ion cutting
Single crystal Si layers on glass formed by ion cutting
复制标题
通过离子切割在玻璃上形成单晶硅层
DOI：
10.1063/1.1492017
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
J. Mayer
中科院分区：
文献类型：
--
作者：
M. Cai;D. Qiao;L. S. Yu;S. Lau;C. P. Li;L. Hung;T. E. Haynes;K. Henttinen;I. Suni;V. Poon;T. Marek;J. Mayer
离子切割工艺被用于在玻璃上集成单晶硅层，用于潜在的有源矩阵平板显示器和其他应用。结果表明，在10 0~15 0℃，注入剂量为10 16 cm−2数量级的氢离子注入的p-Si晶片，只要两个表面都经过适当的处理和活化，就能很容易地与玻璃基片结合。注入后的硅片表面由p型转变为n型。经室温键合、300℃退火和450℃剥离后，玻璃表面转移的硅层和注入硅片剥离后的表面仍为n型。在玻璃上的硅层顶部附近观察到一个高度缺陷区，而在层的更深处结晶质量几乎是无缺陷的。在较高温度下连续退火，在∼600-650°C范围内恢复了p型电导率。在样品上观察到的类型转变和随后的退火行为根据离子增强的氧扩散和硅中与H相关的浅施主的存在而被合理化。
The process of ion cutting was used to integrate single crystalline Si layers on glass for potential active matrix flat panel display and other applications. It was found that p-Si wafers implanted at 100–150 ° C with H with a dose in the order of a few times 10 16 cm −2 could be readily bonded to glass substrates when both of the surfaces were properly treated and activated. The as-implanted Si wafer surface was converted from p type to n type. Upon bonding at room temperature, annealing (300 ° C ) and exfoliation (450 ° C ), the transferred Si layer on glass and the as-exfoliated surface of the implanted Si wafer remained n type. A highly defective region was observed near the top of the Si layer on glass, however the crystalline quality was nearly defect free in the deeper region of the layer. Annealing at sequentially higher temperatures led to the recovery of p type conductivity at ∼600–650 ° C . The type conversion and the subsequent annealing behavior observed on the samples were rationalized in terms of ion enhanced oxygen diffusion and the presence of H-related shallow donors in the Si.