Experimental extraction of donor-driven spin relaxation in n-type nondegenerate germanium
Experimental extraction of donor-driven spin relaxation in n-type nondegenerate germanium
复制标题
n型非简并锗中供体驱动的自旋弛豫的实验提取
DOI：
10.1103/physrevb.104.115301
复制
发表时间：
2021
影响因子：
3.7
通讯作者：
and K. Hamaya
中科院分区：
文献类型：
--
作者：
M. Yamada;T. Ueno;T. Naito;K. Sawano;and K. Hamaya
利用横向自旋阀器件中的纯自旋电流输运测量，研究了中等掺杂Ge（P：）的非简并Ge层中的自旋弛豫。在8 ~ 100 K温度范围内，非简并Ge的自旋扩散长度比重掺杂简并Ge（P：）的自旋扩散长度大2 ~ 3倍。我们发现非简并Ge的电子自旋寿命随温度的降低而单调增加。在低于50 K的温度下，可以用Songet等人提出的施主驱动的自旋弛豫机制来解释，包括多通道半导体中的1/行为。[Y.宋，O。Chalaev和H. Dery，Phys. Rev. Lett. 113，167201（2014）0031-900710.1103/PhysRevLett.113.167201]。我们注意到，对于中等掺杂的非简并Ge，除了考虑1/分量外，还必须部分考虑自旋弛豫的-独立分量。
Using pure spin current transport measurements in lateral spin-valve devices, we study the spin relaxation in an-type nondegenerate Ge layer, which is moderately doped Ge (P:). The obtained spin diffusion lengthof the nondegenerate Ge is two to three times greater than that of heavily doped degenerate Ge (P:) in the temperature range from 8 to 100 K. We find that the electron spin lifetime () for the nondegenerate Ge is monotonically increased with decreasing temperature. The increase inat temperatures less than 50 K can be interpreted in terms of the donor-driven spin relaxation mechanism including the 1/behavior in multivalley semiconductors, proposed by Songet al.[Y. Song, O. Chalaev, and H. Dery, Phys. Rev. Lett. 113, 167201 (2014)0031-900710.1103/PhysRevLett.113.167201]. We note that it is important for theof the moderately doped nondegenerate Ge to partly consider the-independent component of spin relaxation in addition to the 1/component.