Carbon nanotubes as Schottky barrier transistors
Carbon nanotubes as Schottky barrier transistors
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DOI：
10.1103/physrevlett.89.106801
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发表时间：
2002-09-02
影响因子：
8.6
通讯作者：
Avouris, P
中科院分区：
文献类型：
--
作者：
Heinze, S;Tersoff, J;Avouris, P
我们表明，碳纳米管晶体管作为非传统的“肖特基势垒晶体管”，其中晶体管的动作发生主要是通过改变接触电阻，而不是沟道电导。晶体管的特性计算为理想化和现实的几何形状，和缩放行为的证明。我们的研究结果解释了各种实验观察，包括掺杂和吸附气体的相当不同的影响。电极的几何形状被证明是至关重要的良好的设备性能。
We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.