Synthesis and properties of epitaxial semiconducting silicides
Synthesis and properties of epitaxial semiconducting silicides
复制标题
外延半导体硅化物的合成与性能
DOI：
10.1016/0169-4332(93)90151-z
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发表时间：
1993
影响因子：
6.7
通讯作者：
M. Grimaldi
中科院分区：
文献类型：
--
作者：
J. Derrien;J. Chevrier;L. T. Vinh;I. Berbezier;C. Giannini;S. Lagomarsino;M. Grimaldi
本报告将回顾外延半导体硅化物的制备和表征的最新技术。重点将放在硅衬底上外延生长的薄 FeSi2 层上。将通过各种原位技术（RHEED、俄歇、光电子发射等）和异位技术（X 射线衍射、RBS、电子显微镜）获得的结果来讨论硅化物形成的机制。此外，对于超薄 FeSi2 薄膜，在 Si 顶部观察到了由外延诱导的几种应变假晶相和金属相。 基材。将介绍它们向稳定的弛豫半导体 β-FeSi2 的转变。还将报告在令人惊讶的低温下观察到的金属 α-FeSi2 相及其向 β 相弛豫的最新发现。
The state-of-the-art in the preparation and characterization of epitaxial semiconducting silicides will be reviewed in this report. Emphasis will be put on thin FeSi2layers epitaxially grown on Si substrates. The mechanisms of silicide formation will be discussed through results obtained by a large variety of in-situ techniques (RHEED, Auger, photoemission, …) and ex-situ techniques (X-ray diffraction, RBS, electron microscopy).Moreover, for ultra-thin FeSi2films, several strained pseudomorphic and metallic phases induced by epitaxy are observed on top of Si substrates. Their transition towards the stable relaxed semiconducting β-FeSi2will be presented. Recent findings of the metallic α-FeSi2phase observed at surprisingly low temperature and its relaxation towards the β-phase will also be reported.