Large Piezoelectric Coefficient in Tb‐Doped BiFeO3 Films
Large Piezoelectric Coefficient in Tb‐Doped BiFeO3 Films
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DOI：
10.1111/j.1551-2916.2009.03511.x
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发表时间：
2010-04
影响因子：
3.9
通讯作者：
Xuemei Chen;G. Hu;Weibing Wu;Changhong Yang;X. Wang;S. Fan
中科院分区：
文献类型：
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作者：
Xuemei Chen;G. Hu;Weibing Wu;Changhong Yang;X. Wang;S. Fan
采用金属有机沉积法在铟锡氧化物/玻璃衬底上制备了BiFeO3和Bi1-xTbxFeO3(x=0.05~0.16)多晶薄膜。研究了Tb掺杂量对材料结构和多铁性的影响。X射线衍射结果表明，BTFO体系在x=0.11附近可能存在结构转变。在所有的BTFO薄膜中都观察到了饱和的矩形P-E磁滞回线。BTFOx=0.11薄膜具有最大剩余离面压电系数(d33=140 pm/V)和饱和磁化强度(M S=22.2emu/cm3)。
Polycrystalline BiFeO 3 and Bi 1-x Tb x FeO 3 (BTFO) (x = 0.05-0.16) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. The influence of Tb doping content on the structure and multiferroic properties was investigated. X-ray diffraction results reveal that there may exist a structure transition around x = 0.11 in the BTFO system. Well-saturated and rectangular P-E hysteresis loops can be observed in all BTFO films. The BTFO x = 0.11 film exhibits the maximum values of the remanent out-of-plane piezoelectric coefficient (d 33 = 140 pm/V) and saturated magnetization (M s = 22.2 emu/cm 3 ).