Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing
Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealing
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DOI：
10.1109/55.988816
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发表时间：
2002-03-01
影响因子：
4.9
通讯作者：
Fukuda, K
中科院分区：
文献类型：
--
作者：
Kosugi, R;Suzuki, S;Fukuda, K
研究了4 H和6 H-SiC（0001）金属氧化物半导体场效应晶体管（MOSFET）的反型沟道迁移率与湿氧化环境中再氧化退火（罗阿）条件的关系。通过氢气和氧气的热解反应（热解罗阿A）提供潮湿环境，其中通过调节氢气/氧气流速来控制水蒸气含量（rho（H2O））。不仅退火温度和时间，而且ρ（H2O）被发现是提高沟道迁移率的关键参数。结果表明，在rho（H2O）为50%的情况下，通过预致热罗阿处理，4 H-SiC MOSFET的场效应沟道迁移率高达47 cm（2）/Vs，6 H-SiC MOSFET的场效应沟道迁移率高达95 cm（2）/Vs。
The inversion channel mobility of 4H and 6H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) has been evaluated for its dependence on the re-oxidation annealing (ROA) conditions in a wet oxidizing ambient. The wet ambient was supplied by the pyrogenic reaction of hydrogen and oxygen gas (pyrogenic ROA), where the water vapor content (rho(H2O)) was controlled by adjusting the hydrogen/oxygen gas flow rate. Not only the annealing temperature and the time, but also rho(H2O) are found to be the critical parameters for improving channel mobility. As a result, field-effect channel mobilities as high as 47 cm(2)/Vs for 4H and 95 cm(2)/Vs for 6H-SiC MOSFETs were achieved by pryrogenic ROA treatment with a rho(H2O) of 50 %.