Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange
Investigating the formation of isotopically pure layers for quantum computers using ion implantation and layer exchange
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DOI：
10.1016/j.nimb.2019.09.013
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发表时间：
2019-12-15
影响因子：
1.3
通讯作者：
Perez-Fadon, Andres
中科院分区：
文献类型：
--
作者：
England, Jonathan;Cox, David;Perez-Fadon, Andres
已经提出了量子计算机，其利用与“半导体真空”中的环境扰动隔离的原子之间的纠缠量子态，所述“半导体真空”可以通过低温冷却由Si或Ge组成的同位素纯的无缺陷晶体层来形成。在一个初步调查的注入和沉积层交换技术，以产生这样的“真空”，一层铝注入Si-28使用传统的光刻机。在退火和横截面之后，在横截面TEM图像中观察到层交换已经产生多个孤立的晶体。进一步沉积的Al层注入Ge使用SIMPLE（单离子多物种定位在低能量）注入器在一系列的注量。在250摄氏度下退火并去除Al之后，在随着注入注量增加的面密度处看到Ge（其也包含Si）的晶体。
Quantum computers have been proposed that exploit entangled quantum states between atoms that are isolated from environmental perturbations in a "semiconductor vacuum" which can be formed by cryogenically cooling an isotopically pure, defect free crystalline layer consisting of Si, or Ge. In a preliminary investigation of an implant and deposition layer exchange technique to produce such "vacuums", a layer of aluminium was implanted with Si-28 using a conventional implanter. After annealing and cross sectioning, layer exchange was observed to have produced multiple isolated crystals in a cross sectional TEM image. Further deposited Al layers were implanted with Ge using a SIMPLE (Single Ion Multispecies Positioning at Low Energy) implanter over a range of fluences. After anneals at 250 degrees C and Al removal, crystals of Ge (which also contained Si) were seen at areal densities that increased with implant fluence.