Spin dephasing of doped electrons in charge-tunable InP quantum dots: Hanle-effect measurements
Spin dephasing of doped electrons in charge-tunable InP quantum dots: Hanle-effect measurements
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DOI：
10.1103/physrevb.74.205332
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发表时间：
2006-11
影响因子：
3.7
通讯作者：
Y. Masumoto;S. Oguchi;B. Pal;M. Ikezawa
中科院分区：
文献类型：
--
作者：
Y. Masumoto;S. Oguchi;B. Pal;M. Ikezawa
用汉勒测量方法研究了单电子掺杂InP量子点的自旋消相弛豫。当一个InP量子点平均掺杂1个电子时，在Hanle曲线上出现一个半宽的窄洛伦兹倾角，并叠加在一个半宽为1.54和1.54的两个洛伦兹倾角上。半宽度、半宽度和半宽度分别归因于空穴的自旋消相弛豫、电子-空穴对和掺杂电子组成的负trions。掺杂电子对应的自旋相干时间是由量子点中核自旋的冻结涨落决定的。随着温度的升高，掺杂电子的自旋失相速率增大。
The spin dephasing relaxation in single-electron-doped InP quantum dots was studied by means of Hanle measurements. When an InP quantum dot is doped with one electron on average, a narrow Lorentzian dip with half-width ofappeared and was superposed on two Lorentzians with half-widths of 1.54 andin the Hanle curve. The half-widths,, andare ascribed to spin-dephasing relaxation of holes, electron-hole pairs, and doped electrons consistuting negative trions, respectively. The corresponding spin coherence time of the doped electrons atis, which is determined by the frozen fluctuation of nuclear spins in the quantum dots. With increase of temperature, the spin-dephasing rate of the doped electrons increases.