Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs
复制标题
负栅极偏置导致肖特基型 p-Gan 栅极 HEMT 动态导通电阻下降
DOI：
10.1109/tpel.2021.3130767
复制
发表时间：
2022
影响因子：
6.7
通讯作者：
Kevin J. Chen
中科院分区：
文献类型：
--
作者：
Zuoheng Jiang;Mengyuan Hua;Xinran Huang;Lingling Li;Chengcai Wang;Junting Chen;Kevin J. Chen
本文系统地研究了商用Schottky型p-GaN G中关态栅极偏置（VGS，OFF）对动态导通电阻（罗恩）的影响
In this article, the impacts of the off-state gate bias (VGS,OFF) on dynamic on-resistance (RON) are systematically investigated in commercial Schottky-type p-GaN G