Nanometer Order Separation Control of Large Working Area Nanogap Created by Cleavage of Single-Crystal Silicon Along {111} Planes Using a MEMS Device
Nanometer Order Separation Control of Large Working Area Nanogap Created by Cleavage of Single-Crystal Silicon Along {111} Planes Using a MEMS Device
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DOI：
10.1109/jmems.2022.3213999
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发表时间：
2023-02
影响因子：
2.7
通讯作者：
Masaki Shimofuri;A. Banerjee;J. Hirotani;Y. Hirai;T. Tsuchiya
中科院分区：
文献类型：
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作者：
Masaki Shimofuri;A. Banerjee;J. Hirotani;Y. Hirai;T. Tsuchiya
具有大工作面积和约1至20 nm的精确控制间隔的纳米间隙在纳米光子学、热管理、发电、化学传感等方面具有重要应用。然而，尚未建立制造这种纳米间隙的有效方法。此外，有必要评估纳米间隙的物理特性对分离的依赖性，但是开发这样的系统在技术上和经济上都很困难。在本研究中，我们开发了一种MEMS器件，该器件可以通过单晶硅束的（111）面解理产生具有大面积和平行光滑表面的纳米间隙，并且可以改变和测量纳米间隙的分离。使用该装置，通过解理和分离控制不间断地进行纳米间隙制造，同时保持真空中差距表面的清洁度;成功地将具有30 μ m $2的大光滑表面积的纳米间隙控制在14 nm-1.5 μ m $的范围内。对于小于100 nm的小分离，控制分辨率在1 nm时足够高。这种方法是完全兼容的传统制造技术，不仅MEMS，但也其他半导体器件，并应有助于制造的设备，表现出有用的量子效应，只有微小的修改。[2022-0073]
Nanogaps with a large working area and a precisely controlled separation of about 1 to 20 nm has important applications in nano photonics, thermal management, power generation, chemical sensing, etc. However, an effective method of fabricating such nanogaps has not yet been established. In addition, it has been necessary to evaluate the dependence of physical characteristics of nanogaps on the separation, but it has been technically and economically difficult to develop such a system. In this study, we developed a MEMS device, which can produce nanogaps with a large area and parallel smooth surfaces by the (111) plane cleavage of a single crystal silicon beam and can change and measure the separation of nanogaps. Using this device, nanogap fabrication by cleavage and separation control were uninterruptedly carried out while maintaining the cleanliness of the gap surfaces in vacuum; a nanogap with a large smooth surface area of $30 ~\mu \text{m}$ 2 was successfully controlled in the range of 14 nm– $1.5 ~\mu \text{m}$ . For a small separation of less than 100 nm, the control resolution was sufficiently high at 1 nm. This method is fully compatible with conventional fabrication technologies for not only MEMS but also other semiconductor devices and should contribute to the fabrication of devices that exhibit useful quantum effects with only minor modifications. [2022-0073]