Stress concentration near a surface step and shear localization
Stress concentration near a surface step and shear localization
复制标题
DOI:
10.1103/physrevb.61.8707
复制
发表时间:
2000-04-01
影响因子:
3.7
通讯作者:
Grilhé, J
中科院分区:
文献类型:
--
作者:
Brochard, S;Beauchamp, P;Grilhé, J
In a previous static atomistic simulation, it has been shown unambiguously that a surface step is a privileged site for dislocation nucleation. Before dislocation nucleation, an elastic shear, localized in the plane in zone with the step where nucleation will occur, is observed. The real dislocation forms when this localized shear reaches, at its maximum, the value where the crystal gets mechanically unstable. The part played by the stress concentration on the shear localization is discussed: although the stress concentration does not involve any shear in the glide planes in zone with the step, it is shown that it produces a variation of the interplanar distance, which can make shear easier. A calculation based on the Frenkel model is developed to analyze the effect of an interplanar distance variation, and the shear distribution that minimizes the strain energy is calculated. The analytical solution obtained is then compared to the results of an atomistic simulation.