Spin injection from a ferromagnetic metal into a semiconductor
Spin injection from a ferromagnetic metal into a semiconductor
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DOI：
10.1063/1.1451887
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发表时间：
2002-05
影响因子：
3.2
通讯作者：
H. Jaffrès;A. Fert
中科院分区：
文献类型：
--
作者：
H. Jaffrès;A. Fert
我们计算了从铁磁金属（F）注入到半导体（SC）或二维半导体电子气（2-DEG）中的电子的自旋极化以及F/SC/F结构的磁阻（MR）。由于F和SC之间的电导失配，只有通过在F/N界面处插入隧道结才能获得有效的自旋注入。我们发现，一个F1/SF/F2结构可以呈现非零MR，如果结电阻选择在一个相对较窄的范围内由自旋扩散长度和电阻率的F和SC，铁磁体之间的距离和宽度的导电沟道。2-DEG的情况是特别有利的。
We calculate the spin polarization of electrons injected from a ferromagnetic metal (F) into a semiconductor (SC) or a two-dimensional semiconductor electron gas (2-DEG) and the resulting magnetoresistance (MR) of a F/SC/F structure. Due to the conductivity mismatch between F and SC, efficient spin-injection can be obtained only by inserting a tunnel junction at the F/N interfaces. We find that a F1/SF/F2 structure can present a nonzero MR if the junction resistance is chosen in a relatively narrow range determined by the spin-diffusion length and resistivity of F and SC, the distance between the ferromagnets and the width of the conduction channels. The case of a 2-DEG is particularly favorable.