Effects of electrical current and temperature on contamination-induced degradation in ohmic switch contacts
Effects of electrical current and temperature on contamination-induced degradation in ohmic switch contacts
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DOI：
10.1016/j.triboint.2015.01.001
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发表时间：
2015-05-01
影响因子：
6.2
通讯作者：
de Boer, Maarten P.
中科院分区：
文献类型：
--
作者：
Brand, Vitali;Saleh, Mohamed E.;de Boer, Maarten P.
随着硅基金属氧化物半导体场效应晶体管的缩放接近极限，欧姆开关最近被认为是一种可行的替代或补充技术。然而，这些设备中的电触点容易受到环境碳氢化合物的污染，从而减少了通过开关的信号传输。在这项工作中，我们报告了电流和温度这两个关键参数如何影响污染物诱导的降解机制。结果表明，通过触点的电流显著增加了污染物的生长，但也增加了其导电性。我们还证明，增加环境温度延迟和降低污染的增长速度。(C) 2015 Elsevier Ltd.版权所有。
As scaling of silicon-based metal oxide semiconductor field effect transistor approaches its limits, the ohmic switch has recently been regarded as a viable alternative or complementary technology. However, the electrical contacts in these devices are prone to contamination from ambient hydrocarbons that reduces signal transmission through the switch. In this work we report how two key parameters, electrical current and temperature, affect contaminant-induced degradation mechanisms. It is shown that passing electrical current through the contacts significantly increases contamination growth but also increases its conductivity. We also demonstrate that increasing the ambient temperature delays and reduces the rate of contamination growth. (C) 2015 Elsevier Ltd. All rights reserved.