Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
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DOI：
10.1063/1.2812577
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发表时间：
2007-11
影响因子：
4
通讯作者：
A. Seike;T. Tange;Y. Sugiura;I. Tsuchida;Hiromichi Ohta;Takanobu Watanabe;D. Kosemura;A. Ogura;I. Ohdomari
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文献类型：
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作者：
A. Seike;T. Tange;Y. Sugiura;I. Tsuchida;Hiromichi Ohta;Takanobu Watanabe;D. Kosemura;A. Ogura;I. Ohdomari
在n型和p型纳米线场效应晶体管（nwFET）的跨导（gm）的增强证明通过引入受控的拉伸应变到沟道区的图案依赖氧化（PADOX）。gm的值相对于控制器件在p-nwFET中提高了1.5倍，在n-nwFET中提高了3.0倍。通过三维分子动力学模拟计算的应变分布揭示了nwFET沟道中的主要水平拉伸应力。应变控制器件中的拉曼线显示出半峰全宽的增加和向较低波数的偏移，证实gm增强是由于PADOX方法引入的拉伸应力。
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependent oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width at half maximum and a shift to lower wavenumber, confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.