Minimized Energy Loss at the Buried Interface of p‐i‐n Perovskite Solar Cells via Accelerating Charge Transfer and Forming p–n Homojunction
Minimized Energy Loss at the Buried Interface of p‐i‐n Perovskite Solar Cells via Accelerating Charge Transfer and Forming p–n Homojunction
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DOI：
10.1002/aenm.202300382
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发表时间：
2023-04
影响因子：
27.8
通讯作者：
Jiankai Zhang;Bo Yu;Yapeng Sun;Huangzhong Yu
中科院分区：
文献类型：
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作者：
Jiankai Zhang;Bo Yu;Yapeng Sun;Huangzhong Yu
p - i - n钙钛矿太阳能电池（PVSCs）由于低效率的电荷转移和埋藏界面处的大能级偏移所引起的能量损失（Eloss）限制了其发展。在这项工作中，首次提出了一种BF4−阴离子辅助分子掺杂（AMD）策略，以提高空穴传输层（HTLs）的电荷转移能力，并减少PVSCs埋藏界面处的能级偏移。AMD策略提高了聚[双（4‐苯基）（2,4,6‐三甲基苯基）胺]（PTAA）和聚[N，N ‘‐双（4‐丁基苯基）‐N,N ’‐双（苯基）‐联苯胺](poly‐TPD) HTLs的载流子迁移率和密度，同时降低了它们的费米水平。同时，BF4−阴离子调节了钙钛矿膜的结晶，减少了供体型碘空位，导致钙钛矿膜底表面的能量学由n型转变为p型。更快的电荷转移和形成的p-n同质结减少了HTL/钙钛矿埋藏界面的电荷复合和损耗。利用AMD处理PTAA和Poly - TPD作为HTLs的PVSCs显示出最高的功率转换效率（PCE），分别为24.26%和22.65%，并且在最大功率点跟踪400 h后，PCE的保留率分别为90.97%和85.95%。该研究为通过加速电荷转移和形成p - n均结来最小化p - i - n PVSCs埋藏界面的损耗提供了一种有效方法。
The energy loss (Eloss) aroused by inefficient charge transfer and large energy level offset at the buried interface of p‐i‐n perovskite solar cells (PVSCs) limits their development. In this work, a BF4− anion‐assisted molecular doping (AMD) strategy is first proposed to improve the charge transfer capability of hole transport layers (HTLs) and reduce the energy level offset at the buried interface of PVSCs. The AMD strategy improves the carrier mobility and density of poly[bis(4‐phenyl) (2,4,6‐trimethylphenyl) amine] (PTAA) and poly[N,N′‐bis(4‐butilphenyl)‐N,N′‐bis(phenyl)‐benzidine] (Poly‐TPD) HTLs while lowering their Fermi levels. Meanwhile, BF4− anions regulate the crystallization and reduce donor‐type iodine vacancies, resulting in the energetics transformation from n‐type to p‐type on the bottom surface of perovskite film. The faster charge transfer and formed p–n homojunction reduce charge recombination and Eloss at the HTL/perovskite buried interface. The PVSCs utilizing AMD treated PTAA and Poly‐TPD as HTLs demonstrate a highest power conversion efficiency (PCE) of 24.26% and 22.65%, along with retaining 90.97% and 85.95% of the initial PCE after maximum power point tracking for 400 h. This work provides an effective way to minimize the Eloss at the buried interface of p‐i‐n PVSCs by accelerating charge transfer and forming p–n homojunctions.