Analysis of fluctuations in semiconductor devices through self-consistent Poisson-Schrodinger computations
Analysis of fluctuations in semiconductor devices through self-consistent Poisson-Schrodinger computations
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DOI：
10.1063/1.1772886
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发表时间：
2004-08-15
影响因子：
3.2
通讯作者：
Mayergoyz, I
中科院分区：
文献类型：
--
作者：
Andrei, P;Mayergoyz, I
使用自洽泊松-薛定谔计算分析了金属氧化物半导体场效应晶体管中随机掺杂和随机氧化物厚度波动的影响。泊松和薛定谔方程采用牛顿迭代技术求解，其中雅可比矩阵是通过量子力学中的一阶微扰理论计算的。提出了一种基于传输方程线性化的非常快速的技术来计算阈值电压波动。该技术在计算上比传统的蒙特卡罗方法高效得多，并且它产生有关阈值电压波动对掺杂和氧化物厚度波动位置的敏感性的信息。因此，它可以用于半导体器件抗波动结构的设计。报告了使用这种线性化技术获得的样本模拟结果，并将其与使用蒙特卡罗技术获得的结果进行了比较。 (C) 2004 年美国物理研究所。
The effects of random doping and random oxide thickness fluctuations in metal-oxide-semiconductor field-effect transistors are analyzed by using self-consistent Poisson-Schrodinger computations. The Poisson and Schrodinger equations are solved by using the Newton iteration technique in which the Jacobian matrix is computed through first-order perturbation theory in quantum mechanics. A very fast technique based on linearization of the transport equations is presented for the computation of threshold voltage fluctuations. This technique is computationally much more efficient than the traditional Monte Carlo approach and it yields information on the sensitivity of threshold voltage fluctuations to the locations of doping and oxide thickness fluctuations. Hence, it can be used in the design of fluctuation resistant structures of semiconductor devices. Sample simulation results obtained by using this linearization technique are reported and compared with those obtained by using the Monte Carlo technique. (C) 2004 American Institute of Physics.