Growth of high-quality ErBa2Cu3O7-δ thin films
Growth of high-quality ErBa2Cu3O7-δ thin films
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DOI：
10.1016/j.physc.2004.02.226
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发表时间：
2004-10-01
影响因子：
1.7
通讯作者：
Ohshima, S
中科院分区：
文献类型：
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作者：
Ohazama, T;Mukaida, M;Ohshima, S
采用脉冲激光沉积法(PLD)制备了ErBa2Cu3O7-Delta薄膜。使用钛酸锶作为晶格匹配的衬底。在薄膜生长中，衬底温度在720-780℃之间变化。从X射线衍射谱中，只观察到ErBa2Cu3O7-Delta薄膜的00/反射。其他薄膜的c轴平均长度为11.6875埃。在735℃生长的ErBa2Cu3O7-Delta薄膜具有良好的结晶度，而在780℃以上生长的ErBa2Cu3O7-Delta薄膜的0-1峰强度明显减弱。零电阻T-c为90.5K，超导转变宽度为1.5K，原子力显微镜(AFM)观察到薄膜表面有大而平的颗粒。从扫描电子显微镜(SEM)图像中，我们证实了ErBa2Cu3O7-Delta薄膜上有一些直径约为200 nm的颗粒。通过透射电子显微镜观察到ErBa2Cu3O7与衬底的界面清晰可见。(C)2004爱思唯尔B.V.保留所有权利。
ErBa2Cu3O7-delta thin films are grown by pulsed laser deposition (PLD). Using a SrTiO3 as a lattice matched substrate. In the film growth, the substrate temperature is varied from 720 to 780 degreesC. From X-ray diffraction (XRD) patterns, only the 00/ reflections from the ErBa2Cu3O7-delta films are observed. The average of the c-axis length of the other films is 11.6875 Angstrom. ErBa2Cu3O7-delta film grown at 735 degreesC is excellent in the crystallinity, while the intensity of 0 0 1 peaks of the film grown at more than 780 degreesC obviously weakened. The zero resistance T-c is 90.5 K. Superconducting transition width is 1.5 K. Large and flat grains are observed by atomic force microscopy (AFM) at the surface of the film. From the scanning electron microscope (SEM) image, we confirmed some grains with the size of approximately 200 nm in diameter on the ErBa2Cu3O7-delta thin film. We observe the interface of ErBa2Cu3O7-delta, and substrate clearly by transmission electron microscopy (TEM) measurements. (C) 2004 Elsevier B.V. All rights reserved.