Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing
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DOI：
10.1063/5.0124480
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发表时间：
2022-11
影响因子：
4
通讯作者：
Ziyi Zhang;M. Kushimoto;Akira Yoshikawa;K. Aoto;C. Sasaoka;L. Schowalter;H. Amano
中科院分区：
文献类型：
--
作者：
Ziyi Zhang;M. Kushimoto;Akira Yoshikawa;K. Aoto;C. Sasaoka;L. Schowalter;H. Amano
虽然AlGaN基激光二极管在UV-C波长下的脉冲操作已经在先前的研究中得到证实，但是由于高操作电压，在没有冷却的情况下连续振荡是困难的。在这项研究中，关键参数的温度依赖性进行了研究，并讨论了它们对实现连续波激光的影响。阈值电压的降低是通过使激光二极管梅萨的侧面逐渐变细并减小n电极和p电极之间的横向距离来实现的。结果，在[式：见正文]的阈值电流密度和[式：见正文]的阈值电压下，在室温下证明了连续波激光。
Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been confirmed in the previous studies, continuous oscillation without cooling is difficult because of the high operating voltage. In this study, the temperature dependence of key parameters was investigated and their impact on achieving continuous-wave lasing was discussed. A reduction in the threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. As a result, continuous-wave lasing at room temperature was demonstrated at a threshold current density of [Formula: see text] and a threshold voltage of [Formula: see text].