Frequency-scalable SiGe bipolar RFIC front-end design
Frequency-scalable SiGe bipolar RFIC front-end design
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频率可扩展的 SiGe 双极 RFIC 前端设计
DOI：
10.1109/cicc.2000.852645
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
L. Tyler
中科院分区：
文献类型：
--
作者：
O. Shana'a;I. Linscott;L. Tyler
提出了一种高度优化的SiGe射频双极型前端设计。介绍了双极器件的最佳噪声系数(Nf/subOPT/)，并与最小噪声系数(Nf/submin/)进行了对比。推导了在最佳噪声系数点设计低噪声放大器(LNA)的解析方法。针对多频段射频前端设计，优化的低噪声放大器设计与频率呈线性关系。将优化方法推广到改进型Gilbert单元有源混频器的设计中。该技术在1800 MHz的SiGe双极型射频前端上得到了验证，该前端的低噪声放大器在4.5 mA的偏置电流下达到了1.3 dBnF，而混频器在4.8 mA的偏置电流下达到了6.5 dB的单边带噪声系数。
A highly-optimized SiGe RF bipolar front-end design is proposed. The optimum noise figure (NF/sub opt/) of a bipolar device is introduced in contrast with the minimum noise figure (NF/sub min/). An analytical method to design the low noise amplifier (LNA) at the optimum noise figure point is derived. The optimized LNA design scales linearly with frequency for multi-band RF front-end design. The optimization method is extended to the design of an improved Gilbert cell active mixer. The technique was demonstrated on a 1800 MHz SiGe bipolar RF front-end whose LNA achieves a 1.3 dB NF at a bias current of 4.5 mA while the mixer achieves a single-sideband noise figure (SSB NF) of 6.5 dB at only 4.8 mA.