Systematic variation of photoluminescence spectra with donor and acceptor concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in Si
Systematic variation of photoluminescence spectra with donor and acceptor concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in Si
复制标题
Si 中供体和受体浓度范围为 1 × 1010 至 1 × 1020 cm−3 时光致发光光谱的系统变化
DOI：
10.35848/1347-4065/ac7491
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发表时间：
2022
影响因子：
1.5
通讯作者：
A. Ogura
中科院分区：
文献类型：
--
作者：
M. Tajima;H. Toyota;A. Ogura
我们回顾光致发光过程中由于施主和受主杂质的浓度范围从1 × 1010到1 × 1020 cm-3在未补偿和补偿硅在4.2 K的应用杂质表征。观察到杂质束缚激子和杂质团簇束缚激子发射、施主-受主对发射（有和没有离散的尖线）、施主带-受主带发射以及涉及本征简并带的发射的系统演化和消光。这些变化的发生是由于在1 × 1016 cm-3左右的浓度范围内杂质配对或聚集、在1017 cm-3中部范围内杂质带的形成以及它们的统一而从孤立的杂质能级转变为相互作用的杂质能级的结果。与临界莫特浓度3 × 1018 cm-3下的本征带。过渡区中存在多个辐射过程，其强度由杂质浓度和各过程的辐射几率决定。
We review photoluminescence processes due to donor and acceptor impurities with concentrations ranging from 1 × 1010 to 1 × 1020 cm−3 in both uncompensated and compensated Si at 4.2 K for application to the impurity characterization. Systematic evolution and extinction were observed in the impurity bound exciton and impurity cluster bound exciton emission, donor-acceptor pair emission with and without discrete sharp lines, donor-band—to—acceptor-band emission, and the emission involving the intrinsic degenerate band. These variations occur as results of the transition from isolated impurity levels to interacting impurity levels due to impurity pairing or clustering in the concentration range around 1 × 1016 cm−3, the formation of the impurity bands in the range mid 1017 cm−3, and their unification with the intrinsic bands at critical Mott concentration of 3 × 1018 cm−3. Multiple radiative processes coexist in the transition regions and their intensities are determined by the impurity concentrations and the radiative probability of respective processes.