CURRENT INJECTION FROM A METAL TO A DISORDERED HOPPING SYSTEM. II. COMPARISON BETWEEN ANALYTIC THEORY AND SIMULATION
CURRENT INJECTION FROM A METAL TO A DISORDERED HOPPING SYSTEM. II. COMPARISON BETWEEN ANALYTIC THEORY AND SIMULATION
复制标题
电流从金属注入到无序的跳跃系统。
DOI：
--
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Bässler
中科院分区：
文献类型：
--
作者：
V. Arkhipov;U. Wolf;H. Bässler
在之前的论文(I)中描述的从金属到随机有机电介质的跳射的蒙特卡罗模拟已经与解析理论的结果进行了比较。电荷载流子产率随界面能垒的场依赖性得到了很好的一致。这是一个至关重要的测试，以证明在存在长期库仑势可处理的无序系统中给出跳变的分析方法所需的假设的有效性。其中最严重的是处理注入库仑井后载流子从库仑井逃逸的类onsager均匀介质方法。用含输运能量概念的跳变理论处理了电介质的一次注入事件。
Monte Carlo simulations of hopping injection from a metal into a random-organic dielectric, described in the previous paper (I), have been compared to results of analytic theory. Good agreement has been found for the field dependence of the yield of charge carriers as a function of the energy barrier at the interface. This is a crucial test for the validity of the assumptions required in order to render an analytical approach of hopping in a disordered system in the presence of a long-ranged Coulombic potential tractable. The most serious of these is the Onsager-like homogenous medium approach to treat the escape of a charge carrier from the Coulomb well once injected. The primary injection event into the dielectric has been treated in terms of hopping theory implying the concept of transport energy.