An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
An analytic model for gate-all-around silicon nanowire tunneling field effect transistors
复制标题
环栅硅纳米线隧道场效应晶体管的解析模型
DOI：
10.1088/1674-1056/23/9/097102
复制
发表时间：
2014-09-01
影响因子：
1.7
通讯作者：
Wang Wen-Ping
中科院分区：
文献类型：
--
作者：
Liu Ying;He Jin;Wang Wen-Ping
基于沟道方向的表面势解，考虑带带隧穿（BTBT）效率，建立了一种全环栅（GAA）硅纳米线隧穿场效应晶体管（NW-TFSFET）的解析模型.通过求解三维Poisson方程，得到了NW-TFET沟道方向沿着分区的表面电势分布，并利用Kane公式建立了隧道电流模型。模型预测与TCAD仿真结果吻合较好，验证了模型的有效性。
An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.