High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis
High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis
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DOI：
10.1063/5.0058127
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发表时间：
2021-08-30
影响因子：
4
通讯作者：
Jang, Jin
中科院分区：
文献类型：
--
作者：
Hasan, Md Mehedi;Mohit;Jang, Jin
主要使用真空处理的氧化铪基材料的铁电晶体越来越受到关注。在本文中，我们报告了一个解决方案处理的ZnO薄膜晶体管（TFT）具有改善的铁电性能在Hf0.5Zr0.5O2（HZO）使用三层的ZrOx/HZO/AlOx喷雾热解。性能增强是由于底部/顶部电介质层和HZO层之间的热膨胀系数的差异。掠入射x射线衍射、电流-电压、电容-电压、极化-电压和转移曲线中的反电势滞后证实了三层膜具有优异的铁电性。采用ZrOx/HZO/AlOx栅绝缘体的ZnO TFT的存储窗口可达3V，最大开/关比为3.5 × 10（9），场效应迁移率为125 cm（2）/V s，亚阈值斜率为0.18 V/decade，证明了ZnO TFT的高性能。这一结果可以为铁电氧化物TFT在玻璃上的大面积电子器件（包括显示器）提供机会。由AIP Publishing独家授权出版。
There is increasing interest in a ferroelectric transistor, mainly using vacuum processed hafnium oxide based materials. We report in this paper a solution processed ZnO thin-film transistor (TFT) with improved ferroelectric performance in Hf0.5Zr0.5O2 (HZO) using a triple layer of ZrOx/HZO/AlOx by spray pyrolysis. The performance enhancement is due to the difference in thermal expansion coefficient between the bottom/top dielectric and HZO layers. Grazing incident x-ray diffraction, current-voltage, capacitance-voltage, polarization-voltage, and anticlockwise hysteresis in transfer curve confirm the excellent ferroelectricity of the triple layer. A memory window as large as similar to 3 V, the maximum on/off ratio of 3.5 x 10(9), the field-effect mobility of 125 cm(2)/V s, and the subthreshold slope of 0.18 V/decade were obtained from the ZnO TFT with the ZrOx/HZO/AlOx gate insulator, demonstrating the high performance ferroelectric ZnO TFT. This result can open opportunities for ferroelectric oxide TFT for large area electronics on glass, including display. Published under an exclusive license by AIP Publishing.