Hyperspectral time-domain terahertz nanoimaging
Hyperspectral time-domain terahertz nanoimaging
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DOI：
10.1364/oe.27.024231
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发表时间：
2019-08-19
期刊：
影响因子：
3.8
通讯作者：
Abate, Yohannes
中科院分区：
文献类型：
--
作者：
Aghamiri, Neda Alsadat;Huth, Florian;Abate, Yohannes
太赫兹（THz）近场显微镜在纳米材料和光子器件表征方面具有前所未有的广泛应用潜力。本文将散射型扫描近场光学显微镜（s-SNOM）与太赫兹时域光谱学（TDS）相结合，引入太赫兹高光谱纳米成像技术。我们描述了实现这一成就的技术实现，并通过异质掺杂Si半导体样品展示了其性能。具体来说，我们在180分钟内记录了40 × 20像素的高光谱图像，每个像素的空间分辨率约为170 nm，时域光谱范围为0.4 ~ 1.8 THz。用德鲁德模型拟合光谱允许测量-非侵入性和不需要欧姆接触-不同掺杂Si区域的局部移动载流子浓度。我们展望太赫兹高光谱纳米成像的广泛应用潜力，包括工业半导体结构的纳米载流子分析或表征复杂和相关的电子物质，以及低维（1D或2D）材料。(C) 2019年美国光学学会根据OSA开放获取出版协议的条款
Terahertz (THz) near-field microscopy has wide and unprecedented application potential for nanoscale materials and photonic-device characterization. Here, we introduce hyperspectral THz nano-imaging by combining scattering-type scanning near-field optical microscopy (s-SNOM) with THz time-domain spectroscopy (TDS). We describe the technical implementations that enabled this achievement and demonstrate its performance with a heterogeneously doped Si semiconductor sample. Specifically, we recorded a hyperspectral image of 40 by 20 pixels in 180 minutes and with a spatial resolution of about similar to 170 nm by measuring at each pixel with a time domain spectrum covering the range from 0.4 to 1.8 THz. Fitting the spectra with a Drude model allows for measuring-noninvasively and without the need for Ohmic contacts-the local mobile carrier concentration of the differently doped Si areas. We envision wide application potential for THz hyperspectral nano-imaging, including nanoscale carrier profiling of industrial semiconductor structures or characterizing complex and correlated electron matter, as well as low dimensional (1D or 2D) materials. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement