Dependence of IR optical properties of bulk-doped silicon on carrier concentration
Dependence of IR optical properties of bulk-doped silicon on carrier concentration
复制标题
体掺杂硅的红外光学特性对载流子浓度的依赖性
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
M. Auslender
中科院分区：
文献类型：
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作者：
S. Hava;M. Auslender
计算了电子浓度在1021 cm~(-3)以下的体掺杂n型硅的红外光学常数(折射率和消光系数)和反射率。这些计算是基于动态介电函数的广义Drude-Lorentz形式和电流松弛方法。红外吸收随电子浓度的变化呈非单调行为。讨论了理论结果与现有实验数据之间的联系。
The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 1021 cm-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.