Photoluminescence quantum yields for atomically thin-layered ReS2: Identification of indirect-bandgap semiconductors
Photoluminescence quantum yields for atomically thin-layered ReS2: Identification of indirect-bandgap semiconductors
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DOI：
10.1063/1.5037116
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发表时间：
2018-09-17
影响因子：
4
通讯作者：
Matsuda, Kazunari
中科院分区：
文献类型：
--
作者：
Mohamed, Nur Baizura;Shinokita, Keisuke;Matsuda, Kazunari
铼二硫属化物作为第七族层状半导体过渡金属二硫属化物（TMD）的新成员，在基础物理和潜在应用方面受到了广泛的关注。在这项研究中，室温下的光致发光（PL）光谱，以及PL量子产率（QYs）的薄层二硫化铼（ReS 2），进行了评估。无论层数如何，从单层厚度到七层（1- 7 L）ReS 2确定了类似于10（-4）的低PL QY。这些低PL QY强烈表明ReS 2是从单层限制到本体的间接带隙半导体，这与对于第VI族TMD（MX2：M = Mo和W; X = S和Se）观察到的那些相反。我们的实验结果将提供有价值的信息，电子和光学器件的应用在原子薄层ReS 2。出版社：AIP Publishing
Rhenium dichalcogenides have attracted considerable attention as new members of group VII layered semiconductor transition-metal dichalcogenides (TMDs) with respect to fundamental physics and potential applications. In this study, room-temperature photoluminescence (PL) spectra, as well as PL quantum yields (QYs) of thin-layer rhenium disulfide (ReS2), were evaluated. Low PL QYs of similar to 10(-4) were determined from a monolayer thickness to seven layers (1-7L) of ReS2 regardless of the layer number. These low PL QYs strongly suggest that the ReS2 is an indirect-bandgap semiconductor from a monolayer limit to the bulk, which is in contrast to those observed for group VI TMDs (MX2: M = Mo and W; X = S and Se). Our experimental findings will provide valuable information for the electronic and optical device applications in atomically thin-layered ReS2. Published by AIP Publishing.