SiC JFET dc characteristics under extremely high ambient temperatures
SiC JFET dc characteristics under extremely high ambient temperatures
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极高环境温度下的 SiC JFET 直流特性
DOI：
10.1587/elex.1.523
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
T. Hikihara
中科院分区：
文献类型：
--
作者：
T. Funaki;J. Balda;J. Junghans;A. Kashyap;F. Barlow;H. Mantooth;T. Kimoto;T. Hikihara
本文报道了SiC JFET器件从室温到450°C的直流特性测量结果，以评估该器件的高温工作能力。作者将SiC JFET裸芯片封装到专用的高温封装中，以便能够在极高的环境温度下进行实验。实验结果表明，该器件可以在450°C下工作，这是传统Si器件无法达到的，但SiC JFET的电流能力随着温度的升高而降低。例如，饱和电流在450°C时相对于室温下的值变为20%。
This paper reports on the measured dc characteristics of a SiC JFET device from room temperature up to 450°C in order to evaluate the device's capability for high-temperature operation. The authors packaged SiC JFET bare die into a dedicated high-temperature package to be able to perform experiments under extremely high ambient temperatures. The experimental results show that the device can operate at 450°C, which is impossible for conventional Si devices, but the current capability of the SiC JFET diminishes with rising temperatures. For example, the saturation current becomes 20% at 450°C with respect to the value at the room temperature.