Lattice thermal conductivity of Si nanowires:: Effect of modified phonon density of states
Lattice thermal conductivity of Si nanowires:: Effect of modified phonon density of states
复制标题
硅纳米线的晶格热导率：修改声子态密度的影响
DOI：
10.1063/1.2976314
复制
发表时间：
2008-09-01
影响因子：
3.2
通讯作者：
Lue, Xiang
中科院分区：
文献类型：
--
作者：
Lue, Xiang
我们研究了正方形和圆柱形纳米线的晶格热导率与尺寸的关系。计算中考虑了声子禁闭对声子态密度和群速度的影响。声子态密度和群速度的降低导致硅纳米线的导热系数进一步降低。通过选取合适的界面镜面参数，计算得到的正方形和圆柱形纳米线的导热系数分别与分子动力学和实验结果吻合较好。
We investigate the size-dependent lattice thermal conductivity of silicon (Si) square cross-sectional and cylindrical nanowires. The calculation includes the modifications of the phonon density of states and group velocities due to phonon confinement. The decrease in phonon density of states and group velocities results in further thermal conductivity reduction in Si nanowires. By using suitable values of interface specularity parameters, the calculated thermal conductivities of Si square cross-sectional and cylindrical nanowires are found to be in good agreement with molecular dynamics and experimental results, respectively.