Review-The Physics of Recombinations in III-Nitride Emitters
Review-The Physics of Recombinations in III-Nitride Emitters
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DOI：
10.1149/2.0372001jss
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发表时间：
2019-12-13
影响因子：
2.2
通讯作者：
Craven, Michael D.
中科院分区：
文献类型：
--
作者：
David, Aurelien;Young, Nathan G.;Craven, Michael D.
综述了III族氮化物发光体中载流子复合的物理过程，重点是实验研究。在讨论了测量复合动力学的各种方法之后，对复合物理学的重要结果进行了检查。辐射率表现出复杂的行为，库仑相互作用和载流子屏蔽的影响。在低和高电流的非辐射重组示出与电子-空穴波函数的重叠成比例，类似于辐射率，导致补偿效应，其解释了III族氮化物发射器的高效率。最后，下垂电流被分解成两个贡献：众所周知的俄歇散射，和缺陷辅助下垂过程，这是发挥重要作用的绿色间隙。(C)作者（S）2019由ECS发布。
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an emphasis on experimental investigations. After a discussion of various methods of measuring recombination dynamics, important results on recombination physics are examined. The radiative rate displays a complex behavior, influenced by Coulomb interaction and carrier screening. Non-radiative recombinations at low and high current are shown to scale with the overlap of electron-hole wavefunctions, similarly to the radiative rate, leading to a compensation effect which explains the high efficiency of III-nitride emitters. Finally, the droop current is decomposed into two contributions: the well-known Auger scattering, and a defect-assisted droop process, which is shown to play an important role in the green gap. (C) The Author(s) 2019. Published by ECS.