Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
复制标题
含有自组装量子点的量子阱中的共振隧道效应和光致发光光谱
DOI：
10.1063/1.1305925
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
G. Hill
中科院分区：
文献类型：
--
作者：
A. Patané;A. Polimeni;L. Eaves;P. Main;M. Henini;Y. Dubrovskiĭ;A. Belyaev;P. N. Brounkov;E. Vdovin;Y. Khanin;G. Hill
We investigate the optical and electrical properties of n-i-n GaAs/(AlGa)As double barrier resonant tunneling diodes (RTDs) in which a layer of InAs self-assembled quantum dots (QDs) is embedded in the center of the GaAs quantum well. A combination of photoluminescence (PL) and electrical measurements indicates that the electronic states and charge distribution in this type of RTD are strongly affected by the presence of the dots. Also, the dot PL properties depend strongly on bias, being affected by tunneling of majority (electrons) and minority (photocreated holes) carriers through the well. The measurements demonstrate nonlinear effects in the QD PL by means of resonant tunneling and the possibility of using the dot PL as a probe of carrier dynamics in RTDs.
