A novel marker approach for the determination of transport numbers during the growth of anodic oxide films on tantalum
A novel marker approach for the determination of transport numbers during the growth of anodic oxide films on tantalum
复制标题
一种新颖的标记方法，用于确定钽上阳极氧化膜生长过程中的输运数
DOI：
10.1080/01418619508236264
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发表时间：
1995
影响因子：
1.6
通讯作者：
G. Wood
中科院分区：
文献类型：
--
作者：
K. Shimizu;K. Kobayashi;G. Thompson;P. Skeldon;G. Wood
摘要利用高场离子传导技术，研究了钽阳极膜中掺杂硅的不迁移性，并开发了一种方法，用于确定钽和其他电解质中掺杂硅的迁移率，这些迁移率有助于薄膜的生长。在所给出的例子中，先在硅酸盐电解质中，然后在硫酸中进行连续阳极氧化，测定了钽阳离子的输运数0.24，这与卢瑟福后向散射光谱和化学切片测定的值非常吻合。
Abstract From knowledge of the immobility of incorporated silicon species in anodic films on tantalum, developed by high-field ionic conduction, a procedure has been developed for their use as a marker to determine the mobilities of species contributing to film growth on tantalum and other species incorporated from the electrolyte. In the example given, sequential anodizing, firstly in silicate electrolyte and subsequently in sulphuric acid, have been used to determine the transport number of tantalum cations, 0.24, which is an excellent agreement with the value determined by Rutherford back-scattering spectroscopy and chemical sectioning.