High-Quality Bulk β-Ga2O3 and β-(AlxGa1-x)2O3 Crystals: Growth and Properties
High-Quality Bulk β-Ga2O3 and β-(AlxGa1-x)2O3 Crystals: Growth and Properties
复制标题
DOI：
10.1002/pssa.202100335
复制
发表时间：
2021-09-03
影响因子：
2
通讯作者：
Romanov, Alexey E.
中科院分区：
文献类型：
--
作者：
Bauman, Dmitrii A.;Panov, Dmitrii Iu;Romanov, Alexey E.
发展了一种从熔体中生长高质量氧化镓（β-Ga 2 O 3）块体晶体的方法。研究了工艺区气氛对提拉法晶体生长稳定性和质量的影响。研究了所得晶体的结构性质。展示了氧化镓衬底的样品。本文研究了生长（Al_xGa_（1-x）_（2）O_3）固体氧化物块体晶体的可能性。
A method for the growth of high-quality gallium oxide (beta-Ga2O3) bulk crystals from the melt is developed. The influence of the atmosphere in the process zone on the stability of growth and the quality of Czochralski grown crystals is studied. The structural properties of the crystals obtained are investigated. Samples of gallium oxide substrates are demonstrated. The possibility of growing bulk crystals of solid-solution oxides (AlxGa1-x)(2)O-3 is tested.