Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates
Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates
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DOI：
10.7567/apex.8.055501
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发表时间：
2015-05-01
影响因子：
2.3
通讯作者：
Shimamura, Kiyoshi
中科院分区：
文献类型：
--
作者：
Oshima, Yuichi;Vllora, Encarnacion G.;Shimamura, Kiyoshi
首次报道了α-Ga_2 O_3的卤化物气相外延。该薄膜是在蓝宝石（0001）衬底上以氯化镓和氧气为前体，无孪晶异质外延生长的。X射线Ω-2 θ和极图测量表明，该膜是单晶（0001）α-Ga 2 O 3，没有可检测到的β-Ga 2 O 3的形成。基于透射光谱确定光学带隙为5.16 eV。生长速率随原料气体的分压单调增加，达到约150 μ m/h，这比常规气相外延生长技术如雾CVD或MBE的生长速率大两个数量级以上。(C)2015日本应用物理学会
The halide vapor phase epitaxy of alpha-Ga2O3 is demonstrated for the first time. The films are twin-free and heteroepitaxially grown on sapphire (0001) substrates using gallium chloride and oxygen as precursors. X-ray omega-2 theta and pole figure measurements reveal that the film is single-crystalline (0001) alpha-Ga2O3 with no detectable formation of beta-Ga2O3. The optical bandgap is determined to be 5.16 eV based on the transmittance spectrum. The growth rate monotonically increases with the partial pressures of the raw material gases, reaching approximately 150 mu m/h, which is over two orders of magnitude larger than those of conventional vapor phase epitaxial growth techniques, such as mist CVD or MBE. (C) 2015 The Japan Society of Applied Physics