Multiple Scattering Correction to the Channeling Surface Peak for Thin Overlayers
Multiple Scattering Correction to the Channeling Surface Peak for Thin Overlayers
复制标题
对薄覆盖层沟道表面峰值的多重散射校正
DOI：
10.1143/jjap.25.902
复制
发表时间：
1986
影响因子：
1.5
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
T. Ito
对于覆盖有薄膜（厚度< 50 μ m）的晶体的MeV离子沟道研究，多次散射对表面峰的贡献可以通过实验减去，因为它以近似误差函数的形式表示。该方法是基于实验观察和计算机计算。Monte Carlo模拟给出了探测离子从衬底原子的后向散射概率的精确角度变化和探测离子通过薄的非晶覆盖层后入射粒子的角分布。所提出的方法需要在表面峰后面的能量区域中的覆盖率相关的信号，其中光谱高度与膜厚度成比例地增加。本方法的局限性，包括基板在界面处混合的情况下，进行了讨论。
The multiple-scattering contribution to the surface peak for MeV ion channeling studies of crystals covered with thin films (< 50 Å thick) can be experimentally subtracted since it is expressed in the form of an approximate error function. The method is based on experimental observations and computor calculations. Monte Carlo simulations give precise angular variations of the backscattering probabilities of probing ions from substrate atoms and angular distribution of incident particles after the passage of probing ions through a thin amorphous overlayer. The proposed method requires coverage-dependent signals in an energy region well behind the surface peak, where the spectrum height increases proportionally with film thickness. The limitations of the present method, including the case of substrate intermixing at the interface, are discussed.