Influence of molecular weight of resist polymers on surface roughness and line-edge roughness
Influence of molecular weight of resist polymers on surface roughness and line-edge roughness
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光刻胶聚合物分子量对表面粗糙度和线边缘粗糙度的影响
DOI：
10.1116/1.1805546
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发表时间：
2004
影响因子：
1.4
通讯作者：
H. Namatsu
中科院分区：
文献类型：
--
作者：
T. Yamaguchi;K. Yamazaki;H. Namatsu
研究了分子质量对断链型正音电子束抗蚀剂溶解前沿粗糙度（表面粗糙度）和线边粗糙度（LER）的影响。通过原子力显微镜直接观察显影后的水浸抗蚀剂表面和图案的侧壁，分别测量表面粗糙度和LER。结果表明，表面粗糙度和LER对分子量的依赖关系存在较大差异。表面粗糙度随着分子量的增加而增加。这是因为随着分子量的增加，从表面突出的聚集体的大小随着分子量的增加而变大。相比之下，发现低分子量抗蚀剂的LER比高分子量抗蚀剂大。此外，对于低分子量和高分子量的抗蚀剂，LER对潜在图像轮廓的依赖性是不同的。对于低分子量抗蚀剂，LER与陡度无关。
The effect of molecular weight on the roughness of the dissolution front (surface roughness) and line-edge roughness (LER) was investigated in a chain-scission-type of positive-tone electron-beam resist. Surface roughness and LER were measured by directly observing the surface of flood-exposed resists after development and the sidewall of patterns, respectively, with an atomic force microscope. It was clarified that the molecular weight dependencies of surface roughness and LER are quite different. Surface roughness was found to increase with molecular weight. This is because the size of aggregates protruding from the surface as a result of the development process becomes larger as the molecular weight increases. In contrast, LER was found to be larger in a low-molecular-weight resist than in a high-molecular-weight resist. Moreover, the dependence of LER on the latent-image profile is different for low- and high-molecular-weight resists. For low-molecular-weight resist, LER is independent of the steepnes...