The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region
The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region
复制标题
考虑空间电荷区域中载流子的产生（热或光），计算硅 p-N 结中的雪崩倍增因子
DOI：
10.1109/t-ed.1973.17730
复制
发表时间：
1973
影响因子：
3.1
通讯作者：
Dorel C. Prisecaru
中科院分区：
文献类型：
--
作者：
C. Bulucea;Dorel C. Prisecaru
分析了硅p-n结空间电荷区内载流子的产生对其击穿特性的影响。给出了计算单侧硅结总倍增与电压和衬底浓度的通用图，其中考虑了引发载流子的注入和生成。结果表明，实际（即世代主导）硅结的倍增因子 M 不同于纯空穴-纯电子倍增因子 M p 和 M n ，并且范围在它们之间，即 M_{p} 。其计算出的电压依赖性可以很好地近似于米勒关系，其中指数 n 介于 4 和 7 之间，衬底中的杂质浓度在 1014 和 1017cm-3 之间。
The influence of carrier generation within the space-charge regions of silicon p-n junctions upon their breakdown characteristics is analyzed. Universal plots for the calculation of the total multiplication in one-sided silicon junctions versus voltage and substrate concentration are given, which take into account both injection and generation of initiating carriers. It is shown that the multiplication factor M of practical (i.e., generation-dominated) silicon junctions differs from the pure hole-pure electron multiplication factors M p and M n and ranges between them, i.e., M_{p} . Its calculated voltage dependence is well approximated by Miller's relationship with an exponent n between 4 and 7 for impurity concentrations in the substrate between 1014and 1017cm-3.