Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm
Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm
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DOI：
10.1007/s00340-011-4670-5
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发表时间：
2012-02
期刊：
影响因子：
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通讯作者：
S. Lamrini;P. Koopmann;M. Schäfer;K. Scholle;P. Fuhrberg
中科院分区：
文献类型：
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作者：
S. Lamrini;P. Koopmann;M. Schäfer;K. Scholle;P. Fuhrberg
本文报道了一种用新型的GaSb基激光二极管堆直接带内泵浦的高功率Ho：YAG激光器。在室温下，获得了55W的2.122 μm连续激光输出，相对于泵浦功率的斜率效率为62%。对于窄线宽激光器操作，使用体布拉格光栅作为输出耦合器。在波长稳定工作时，获得了18W的2.096 μm激光输出，斜率效率为30%。在这种情况下，线宽从1.2 nm减小到0.1 nm以下。本文还介绍了Ho：YAG晶体在室温下的光谱特性。
An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented.