Low-temperature annealing induced amorphization in nanocrystalline NiW alloy films
Low-temperature annealing induced amorphization in nanocrystalline NiW alloy films
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DOI：
10.1155/2013/252965
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发表时间：
2013
影响因子：
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通讯作者：
Z. Q. Chen;Fei Wang;P. Huang;T. Lu;K. Xu
中科院分区：
文献类型：
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作者：
Z. Q. Chen;Fei Wang;P. Huang;T. Lu;K. Xu
溅射玻璃薄膜的非晶化主要发生在过冷液相区。然而，基于X射线衍射和透射电子显微镜的分析，我们证明了纳米晶(NC)溅射的NiW合金薄膜在相对较低的温度下可以发生几乎完全的非晶化。Ni4W相的形成引起的W含量的过饱和在NiW合金薄膜的非晶化过程中起着关键作用，当薄膜在473K下退火30min时，薄膜在进一步退火60min时几乎完全非晶化。自由体积从非晶区向晶区的重新分布被认为是NiW合金中观察到的几乎完全非晶化的可能机制。
Annealing induced amorphization in sputtered glass-forming thin films was generally observed in the supercooled liquid region. Based on X-ray diffraction and transmission electron microscope (TEM) analysis, however, here, we demonstrate that nearly full amorphization could occur in nanocrystalline (NC) sputtered NiW alloy films annealed at relatively low temperature. Whilst the supersaturation of W content caused by the formation of Ni4W phase played a crucial role in the amorphization process of NiW alloy films annealed at 473K for 30 min, nearly full amorphization occurred upon further annealing of the film for 60 min. The redistribution of free volume from amorphous regions into crystalline regions was proposed as the possible mechanism underlying the nearly full amorphization observed in NiW alloys.