Colloidal CIGS and CZTS nanocrystals: A precursor route to printed photovoltaics
Colloidal CIGS and CZTS nanocrystals: A precursor route to printed photovoltaics
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DOI：
10.1016/j.jssc.2011.11.002
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发表时间：
2012-05-01
影响因子：
3.3
通讯作者：
Korgel, Brian A.
中科院分区：
文献类型：
--
作者：
Akhavan, Vahid A.;Goodfellow, Brian W.;Korgel, Brian A.
这篇综述文章总结了我们重点关注 Cu(In1-xGax)Se-2 (CIGS) 纳米晶体的研究，包括它们的合成和作为光伏器件 (PV) 中活性光吸收材料的实现。 CIGS PV 层通常采用高温（>450 摄氏度）工艺制成，其中 Cu、In 和 Ga 依次或共蒸发和硒化。我们试图使用按所需化学计量合成的 CIGS 纳米晶体来沉积光伏器件层，而无需高温处理。这种方法使用 CIGS 光吸收层的喷涂沉积，无需高温硒化，在 AM 1.5 太阳光照下实现了高达 3.1% 的功率转换效率。尽管器件效率太低而无法商业化，但这些器件提供了概念验证，即溶液沉积的 CIGS 纳米晶体薄膜可以在光伏器件中发挥作用，从而实现非常规器件架构和材料组合，包括使用灵活、廉价和轻质的塑料基板。 (C) 2011 Elsevier Inc. 保留所有权利。
This review article summarizes our research focused on Cu(In1-xGax)Se-2 (CIGS) nanocrystals, including their synthesis and implementation as the active light absorbing material in photovoltaic devices (PVs). CIGS PV layers are typically made using a high temperature ( >450 degrees C) process in which Cu, In and Ga are sequentially or co-evaporated and selenized. We have sought to use CIGS nanocrystals synthesized with the desired stoichiometry to deposit PV device layers without high temperature processing. This approach, using spray deposition of the CIGS light absorber layers, without high temperature selenization, has enabled up to 3.1% power conversion efficiency under AM 1.5 solar illumination. Although the device efficiency is too low for commercialization, these devices provide a proof-of-concept that solution-deposited CIGS nanocrystal films can function in PV devices, enabling unconventional device architectures and materials combinations, including the use of flexible, inexpensive and light-weight plastic substrates. (C) 2011 Elsevier Inc. All rights reserved.