Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure
Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure
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DOI：
10.1007/s11664-014-3547-x
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发表时间：
2015-02
影响因子：
2.1
通讯作者：
Y. Pei;Biaoren Mai;Xiaoke Zhang;R. Hu;Ya Li;Zimin Chen;B. Fan;Jun Liang;Gang Wang
中科院分区：
文献类型：
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作者：
Y. Pei;Biaoren Mai;Xiaoke Zhang;R. Hu;Ya Li;Zimin Chen;B. Fan;Jun Liang;Gang Wang
研究了 Ag/a-IGZO/Pt 结构阻变随机存取存储器 (ReRAM) 的双极阻变特性。采用射频磁控溅射系统在室温、氩（Ar）和氧（O2）混合气体环境下制备非晶In-Ga-Zn-O（a-IGZO）薄膜。溅射沉积期间的氧分压从 0% 变化到 17%，以设计 a-IGZO 层中的缺陷。当氧分压增加到 17% 时，观察到无成型双极电阻开关特性，器件成品率接近 100%。此外，免成型ReRAM器件具有增强的电阻切换均匀性和增强的耐用性。通过对X射线光电子能谱和电流-电压（I-V）曲线的分析，无成形电阻转换归因于a-IGZO薄膜中与氧相关的缺陷的浓度，从而可以降低银（Ag）导电丝的成形能。
Bipolar resistive switching properties of Ag/a-IGZO/Pt structure resistive random-access memories (ReRAMs) were investigated. The amorphous In-Ga-Zn-O (a-IGZO) films were prepared by a radio frequency magnetron sputtering system at room temperature in mixed gas ambient of argon (Ar) and oxygen (O2). The oxygen partial pressures during sputtering deposition were varied from 0% to 17% to engineer defects in an a-IGZO layer. When the oxygen partial pressure increased to 17%, forming-free bipolar resistive switching properties were observed with nearly 100% device yield. In addition, the forming-free ReRAM device presents an enhanced resistive switching uniformity and an enhanced endurance. The forming-free resistive switching is attributed to the concentration of oxygen-related defects in an a-IGZO thin film via analyses of x-ray photoelectron spectroscopy and current–voltage (I–V) curves, with which it is possible to reduce the forming energy of silver (Ag) conductive filaments.