In situ reversible tuning of photoluminescence of an epitaxial thin film via piezoelectric strain induced by a Pb(Mg1/3Nb2/3)O3- PbTiO3 single crystal
In situ reversible tuning of photoluminescence of an epitaxial thin film via piezoelectric strain induced by a Pb(Mg1/3Nb2/3)O3- PbTiO3 single crystal
复制标题
通过 Pb(Mg1/3Nb2/3)O-3- PbTiO3 单晶诱导的压电应变原位可逆调谐外延薄膜的光致发光
DOI:
10.1039/c7tc03123h
复制
发表时间:
2017-09-21
影响因子:
6.4
通讯作者:
Luo, Haosu
中科院分区:
文献类型:
--
作者:
Wang, Feifei;Liu, Dan;Luo, Haosu
Conventionally, photoluminescence (PL) properties are mainly modulated through traditional chemical approaches which are ex situ, irreversible and static modulation techniques, potentially limiting the understanding of the detailed process of luminescence and smart PL applications. Here, an in situ dynamic routine is developed to tune the PL response in an epitaxial Yb3+/Er3+ co-doped BaTiO3 thin film through electric-field-induced strain of a piezoelectric single-crystal Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) substrate. A reversible tuning and enhancement of the PL intensity was achieved when an external electric field was applied to the PMN-PT single-crystal substrate. The underlying mechanism responsible for the dynamic enhancement of the PL intensity was attributed to the strain induced lower host symmetry so as to enhance the hypersensitive transition probability of the rare-earth ions. The present work could provide a significant guide for the in situ dynamic and active modulation of the PL performances of luminescent devices through the piezoelectric strain.