Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber

Passively Q-switched ytterbium-doped ScBO3 laser with black phosphorus saturable absorber
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黑磷可饱和吸收体被动调Q掺镱ScBO3激光器

DOI:
10.1117/1.oe.55.8.081312
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发表时间:
2016-08
影响因子:
1.3
通讯作者:
Wang, Jiyang
Wang, Jiyang
中科院分区:
工程技术4区
文献类型:
--
作者:
Liu, Zhongyuan;Yu, Haohai;Zhang, Huaijin;Wang, Jiyang

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抽象。我们展示了一个被动调Q的Yb 3+掺杂的ScBO3体激光器使用黑磷(BP)的可饱和吸收体,一个二维半导体。BP的响应光谱表明,它适合作为一个通用的开关从可见光到中红外波段的光谱范围。考虑到BP晶体的可饱和吸收特性和掺Yb 3+晶体的发射特性,以Yb 3+:ScBO 3晶体为增益材料,制备的BP晶体为调Q元件,实现了被动调Q的体激光脉冲。由于Yb 3+:ScBO 3的大储能容量,获得了1.4 μJ的最大输出能量,这与之前报道的石墨烯调Q激光器的最大能量相当。所获得的结果确定BP作为脉冲调制器在体激光器的潜在能力,BP在其广泛的应用,包括光子学和光电子学中起着越来越重要的作用。
Abstract. We demonstrate a passively Q-switched Yb3+-doped ScBO3 bulk laser using a black phosphorous (BP) saturable absorber, a two-dimensional semiconductor. The response spectra of BP show that it is suitable as a universal switcher in the spectral range from the visible to midinfrared band. Considering the saturable absorption properties of BP and emission properties of Yb3+-doped crystals, the passively Q-switched bulk laser pulses were realized with the Yb3+:ScBO3 crystal as a gain material and a fabricated BP sample as a Q-switcher. Because of the large energy storage capacity of Yb3+:ScBO3, the maximum output energy is obtained to be 1.4  μJ, which is comparable with the previous reported maximum energy of graphene Q-switched lasers. The obtained results identify the potential capability of BP as a pulse modulator in bulk lasers, and BP plays an increasingly important role in a wide range of its applications, including photonics and optoelectronics.
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