Charge density wave transitions in mechanically-exfoliated NbSe3 devices
Charge density wave transitions in mechanically-exfoliated NbSe3 devices
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DOI：
10.35848/1347-4065/ac0644
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发表时间：
2021
影响因子：
1.5
通讯作者：
K. Fujiwara;S. Iwakiri;Mori Watanabe;R. Nakamura;Masahiko Yokoi;K. Kobayashi;Y. Niimi
中科院分区：
文献类型：
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作者：
K. Fujiwara;S. Iwakiri;Mori Watanabe;R. Nakamura;Masahiko Yokoi;K. Kobayashi;Y. Niimi
研究了用机械剥离技术制备的厚度为20 ~ 170 nm的NbSe3器件的电荷密度波跃迁。NbSe3表现出两种CDW转变：一种是T1≈140 K以下的线性嵌套（CDW1），另一种是T2≈60 K以下的对角嵌套（CDW2）。对于这两种转变，在t = 20 nm处观察到明显的电阻率变化，表明即使对于薄NbSe3器件，CDW状态也是稳健的。结果还表明，表面声波可用于调制NbSe3器件中的CDW。
We studied charge density wave (CDW) transitions in NbSe3 devices with thicknesses t from 20 to 170 nm, fabricated by the mechanical exfoliation technique. NbSe3 exhibits two CDW transitions: one is the linear nesting (CDW1) below T1≈140 K and the other is the diagonal nesting (CDW2) below T2≈60 K. For both the transitions, clear resistivity changes were observed down to t = 20 nm, indicating that the CDW states are robust even for the thin NbSe3 devices. The result also suggests that surface acoustic waves could be useful to modulate the CDW in the NbSe3 devices.