12.2 A 4-Channel 200Gb/s PAM-4 BiCMOS Transceiver with Silicon Photonics Front-Ends for Gigabit Ethernet Applications
12.2 A 4-Channel 200Gb/s PAM-4 BiCMOS Transceiver with Silicon Photonics Front-Ends for Gigabit Ethernet Applications
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12.2 适用于千兆以太网应用的具有硅光子前端的 4 通道 200Gb/s PAM-4 BiCMOS 收发器
DOI:
10.1109/isscc19947.2020.9062992
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
Angelo Moroni
中科院分区:
文献类型:
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作者:
E. Sentieri;T. Copani;A. Paganini;M. Traldi;A. Palladino;Antonio Santipo;L. Gerosa;M. Repossi;Gianluca Catrini;Marta Campo;F. Radice;A. Diodato;R. Pelleriti;D. Baldi;Laura Tarantini;L. Maggi;Gianluca Radaelli;Stefano Cervini;Francesco Clerici;Angelo Moroni
The ever-increasing demand for high network capacities and escalating data centers have pushed the boundary from discrete transceivers toward the integration of monolithic electro-optical ICs [1]. Furthermore, complex modulation schemes such as PAM-4 have been introduced to improve the trade-off between circuit bandwidth, power consumption, data-rate and optical-link range compared to NRZ signaling. Therefore, the cost advantage of a fully integrated silicon solution will eventually push classical discrete implementations toward obsolescence.