Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer
Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer
复制标题
使用AlxGa1-xN载流子储存层显着提高深紫外发光二极管的效率
DOI：
10.7567/1882-0786/ab22df
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发表时间：
2019-06-01
影响因子：
2.3
通讯作者：
Chen, Zhitao
中科院分区：
文献类型：
--
作者：
He, Longfei;Zhao, Wei;Chen, Zhitao
研究了在深紫外发光二极管（DUV LED）中使用AlxGa 1-xN载流子储存层（CRL）代替传统的最后一个量子势垒的优点。结果表明，内量子效率显著提高，效率下降现象得到缓解。这些改进主要归因于空穴注入和辐射复合率的显著增强。此外，当CRL的Al含量逐渐降低到量子威尔斯的Al含量时，大量的电子和空穴被保留在CRL区域中并重新结合以发射DUV光，导致光学性能的显著增强。
The advantages of using an AlxGa1-xN carrier reservoir layer (CRL) instead of the traditional last quantum barrier for deep-ultraviolet light-emitting diodes (DUV LEDs) were investigated. The results indicate that the internal quantum efficiency is markedly enhanced and the efficiency droop phenomenon is alleviated. These improvements are mainly attributed to the significantly enhanced hole-injection and radiative recombination rate. Additionally, when the Al contents of the CRL gradually decrease to that of the quantum wells, a large number of electrons and holes are reserved in the CRL region and recombined to emit DUV light, leading to marked enhancement of the optical performance.